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Band gap controlled H loss from passivated Hg₁₋_xCd_xTe (MCT) wafers under intense electronic excitations

Authors:	Anjali S. GhoshP. Srivastava S.A. KhanA.P. Pathak

Affiliation:	^a Nanostech Laboratory, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India ^b Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India ^c School of Physics, University of Hyderabad, Hyderabad 500046, India

Abstract:	We report here loss of H monitored by on-line elastic recoil detection analysis (ERDA) technique from passivated Hg₁₋_xCd_xTe (MCT) wafers due to irradiation by 80 MeV Ni⁹⁺, 120 MeV Au¹⁵⁺ and 200 MeV Ag¹⁰⁺. The loss of H is more in case of the wafer irradiated by Ag ions as compared to other two because of higher electronic energy loss (S_e). For same S_e value, H loss is more in case of the wafer having x = 0.29 as compared to the one having x = 0.204. This is due to higher band gap of the former as compared to the later, which is an important data for proper use of these materials as IR detector in intense radiation zone. These results are explained on the basis of thermal spike model of ion-solid interaction.

Keywords:	Hydrogenated MCT Elastic recoil detection analysis IR detector Thermal spike model
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