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Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation |
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| Authors: | D. SmeetsB.C. Johnson J.C. McCallumC.M. Comrie |
| Affiliation: | a RQMP, Département de Physique, Université de Montréal, Montréal, QC, Canada H3C 3J7 b School of Physics, University of Melbourne, Victoria 3010, Australia c Department of Physics, University of Cape Town, Rondebosch 7700, South Africa |
| Abstract: | The diffusion of hydrogen in amorphous silicon formed by ion implantation is studied using real-time elastic recoil detection analysis. An activation energy for H diffusion of 1.82 eV is determined in a single ramped anneal. This activation energy is consistent with diffusion studies in the high H concentration regime. The low beam current employed is found to have a negligible influence on the H diffusion within the sensitivity of the measurement. Further refinements for increased accuracy of this technique are discussed. |
| Keywords: | Elastic recoil detection Hydrogen diffusion Amorphous silicon |
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