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Effect of a body-tie structure fabricated by partial trench isolation on the suppression of floating body effect induced soft errors in SOI SRAM investigated using nuclear probes |
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| Authors: | Satoshi Abo Naoyuki MasudaFujio Wakaya Shinobu OnodaTakahiro Makino Toshio HiraoTakeshi Ohshima Toshiaki IwamatsuHidekazu Oda Mikio Takai |
| Affiliation: | a Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan b Semiconductor Analysis and Radiation Effects Group, Environment and Industrial Materials Research Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292, Japan c Advanced Device Technology Department, Production and Technology Unit, Devices & Analysis Technology Division, Renesas Electronics Corporation, 751, Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan |
| Abstract: | Soft errors induced by proton, helium and oxygen ion irradiations were measured as a function of distance between a body electrode under partial trench isolation and a metal pad connected to a tungsten via for the first metal layer of a silicon-on-insulator (SOI) static random access memory. Abnormal drain charges induced by ion irradiations with various distances in the SOI metal oxide semiconductor field effect transistor were simulated to be compared with the experimental results. The soft errors were found to depend on the distance between the body electrode and the metal pad in the case of the abnormal drain charge, which is induced by incident ions, lower than the critical charge of the SRAM cells. The soft errors did not depend on the distance for the abnormal drain charges higher than the critical charge. |
| Keywords: | Silicon-on-insulator Floating body effect Reliability Body-tie structure Soft error Nuclear microprobe |
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