Electronic stopping dependence of ion beam induced modifications in GaN |
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Authors: | G. DevarajuA.P. Pathak N. SathishN. Srinivasa Rao V. SaikiranA.I. Titov |
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Affiliation: | a School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046, India b Department of Physical Electronics, State Polytechnical University, St. Petersburg 195251, Russia |
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Abstract: | We report here Swift heavy ion induced effects in GaN samples grown by metal organic chemical vapor deposition (MOCVD) technique. These samples were irradiated with 80 MeV Ni and 100 MeV Ag ions at a fixed fluence of 1 × 1013 ions/cm2. Ion species and energies are chosen such that the difference in their electronic energy loss (Se) would be 8 keV/nm. Effects of Ag on structural and optical properties over Ni ions have been discussed extensively. We employed different characterization techniques like High Resolution X-ray Diffraction (HRXRD) and Raman Spectroscopy for defect density calculations and for vibrational modes, respectively. Defect densities are calculated and compared using Williamson-Hall method from HRXRD. Change of strain and vibrational modes with Se has been discussed. |
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Keywords: | GaN Swift heavy ion irradiation HRXRD Raman spectroscopy |
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