Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling |
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Authors: | Petr Bábor Radek DudaStanislav Pr?ša Tomáš MatlochaMiroslav Kolíbal Jan ?echalMichal Urbánek Tomáš Šikola |
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Affiliation: | Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic |
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Abstract: | A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions were monitored while in-between the sputtering cycles the TOF-LEIS spectra of scattered He neutrals were acquired. All the measured TOF-LEIS spectra versus sputtering time were displayed in one bitmap from which the depth profiles for different scattering depths were derived and analyzed. Analyzing the TOF-LEIS spectra of He particles scattered from the areas below the layer altered by ion-beam mixing led to an improvement of the depth resolution. In this way the resolution limits due to mixing phenomena can be overcome. Finally, the direct comparison of the DSIMS and TOF-LEIS depth profiles was carried out. |
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Keywords: | DSIMS TOF-LEIS LEIS Depth profiling MoSi HRTEM |
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