High-speed modulation of 850-nm intracavity contacted shallowimplant-apertured vertical-cavity surface-emitting lasers |
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Authors: | Dang G. Hobson W.S. Chirovsky L.M.F. Lopata J. Tayahi M. Chu S.N.G. Ren F. Pearton S.J. |
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Affiliation: | Dept. of Chem. Eng., Florida Univ., Gainesville, FL; |
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Abstract: | GaAs-AlGaAs quantum-well (850 nn) vertical-cavity surface-emitting lasers, with lateral current injection and shallow implanted apertures, show small signal modulation bandwidths of at least 11 GHz and large signal data rates of at least 10 Gb/s. The devices achieved a maximum output power of 2.1 mW, with a threshold current and voltage of 1 mA and 1.71 V, respectively. The shallow implantation step provides photolithographically precise aperture formation (using O+ ions), for efficient lateral current injection into the quantum-well active region of the laser, from intracavity contacts. The device aperture was 7 μm in diameter, and the opening in the annular top contact was 13 μm in diameter. The optical spectrum showed several transverse modes |
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