| Carrier Transport Properties in the Doped Micro—crystalline Silicon Films |
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| 作者姓名： | ZHONG Bo-qiang |
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| 作者单位： | Shanghai Institute of Ceramics，Chinese Academy of Sciences，Shanghai 200050，CHN |
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| 基金项目： | The National Science Foundation of China under Grant (No.69677005). |
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| 摘 要： | Doped micro-crystalline silicon films are deposited at temperatures as low as 400 ℃ by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture. Electrical properties such as the carrier concentration and the Hall mobility are investigated for various measuring temperatures. It is found that the grains of micro-crystalline silicon are preferentially oriented along the (220) direction , and that the Hall mobility is larger than 8 cm 2·V -1 ·s -1 , the carrier concentration is about 1×10 17 cm -1 ～1×10 19 cm -3 at room temperature.
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| 关 键 词： | 化学气相沉积 霍尔迁移率 微单晶硅 载波传输性 |
| 收稿时间： | 1999/4/21 |
Carrier Transport Properties in the Doped Micro-crystalline Silicon Films |
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| ZHONG Bo-qiang.Carrier Transport Properties in the Doped Micro-crystalline Silicon Films[J].Semiconductor Photonics and Technology,1999,5(3):186-189. |
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| Authors: | ZHONG Bo-qiang |
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| Abstract: | Doped micro-crystalline silicon films are deposited at temperatures as low as 400℃ by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture.Electrical properties such as the carrier concentration and the Hall mobility are investigated for various measuring temperatures.It is found that the grains of micro-crystalline silicon are preferentially oriented along the(220) direction,and that the Hall mobility is larger than 8cm^2·V^-1·s^-1,the carrier concentration is about 1×10^17cm^-1-1×10^19cm^-3 at room temperature. |
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| Keywords: | Catalytic Chemical Vapor Deposition Hall Mobility Micro-crystalline Silicon CLC number:TN201 O431 Document code:A |
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