The current status of plasma assisted MBE growth of group III-nitrides

This article outlines very briefly our present state of knowledge concerning the growth and characterization of group III-nitrides by plasma assisted molecular beam epitaxy (PA-MBE) and also discusses the application of MBE for devices. We begin with a discussion of our current knowledge of the growth kinetics for both binary compounds (AlN, GaN and InN) and for alloys with mixed group III (InGaN and AlGaN) and group V (AlAsN and GaAsN) elements. We emphasize the important role that the choice of substrates, stoichiometry and buffer layers play in determining the morphology of GaN. We comment briefly on the problems of doping group III-nitrides, particularly p-type, and finally we mention the present status of devices grown by MBE compared with similar devices grown by metal-organic vapour phase epitaxy (MOVPE). © 1998 Chapman & Hall