| LDMOS功率放大器热效应最小化偏置电路设计 |
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| 引用本文： | 冯永生,刘元安. LDMOS功率放大器热效应最小化偏置电路设计[J]. 电子工艺技术, 2006, 27(6): 333-335 |
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| 作者姓名： | 冯永生 刘元安 |
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| 作者单位： | 北京邮电大学,北京,100088;北京邮电大学,北京,100088 |
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| 摘 要： | LDMOS功率放大器的热效应会导致放大器的性能恶化,在LDMOS场效应管自热效应模型的基础上分析和仿真了一种最小化器件热效应的偏置电路设计.实验结果验证了偏置电路的仿真设计方法的有效性.
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| 关 键 词： | LDMOS 温度特性 功率放大器 偏置电路 |
| 文章编号： | 1001-3474（2006）06-0333-03 |
| 收稿时间： | 2006-10-25 |
| 修稿时间： | 2006-10-25 |
Design of Biasing Circuit Applicable for Minimizing Thermal Effect of LDMOS RF Power Amplifier |
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| FENG Yong-sheng,LIU Yuan-an. Design of Biasing Circuit Applicable for Minimizing Thermal Effect of LDMOS RF Power Amplifier[J]. Electronics Process Technology, 2006, 27(6): 333-335 |
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| Authors: | FENG Yong-sheng LIU Yuan-an |
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| Affiliation: | Beijing University of Posts and Telecommunications, Beijing 100088, China |
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| Abstract: | The thermal effect of LDMOS power amplifiers deprives its performances.On the basis of the self-heating effects model of LDMOS FET,analyze and simulate a design of biasing circuit minimizing thermal effect.Finally,the experiment results verify the validity of design. |
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| Keywords: | LDMOS |
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