Magnetization Reversal by Electrical Spin Injection in Ferromagnetic (Ga,Mn)As-Based Magnetic Tunnel Junctions |
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| Authors: | Rai Moriya Kohei Hamaya Akira Oiwa and Hiro Munekata |
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| Affiliation: | (1) Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan;(2) Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-G1-29 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan;(3) PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan |
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| Abstract: | We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 106 A/cm2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer having smaller magnetization with the spin-polarized tunneling current of 105 A/cm2. |
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| Keywords: | III-V magnetic alloy semiconductors spintronics (Ga Mn)As magnetic tunnel junction MBE |
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