超高真空蒸发沉积酞菁铜薄膜的X光电子谱研究

在ＸＰＳ分析室内利用超高真空蒸发方法在单晶硅衬底上沉积酞菁铜薄膜，并利用Ｘ光电子谱（ＸＰＳ）作原位分析，研究酞菁铜薄膜的沉积规律，并讨论了不同条件下酞菁铜配合物分子组成及结构的变化。结果发现利用超高真空沉积方法得到酞菁铜为近化学计量，随着蒸发温度的升高，分子中Ｃｕ原子的含量逐渐减少，Ｎ原子的含理逐渐升高，苯环上的碳原子与类朴啉环上的碳原子的比例逐渐减少，这与酞菁铜分子中各原子的价键状态、酞菁铜分子

An X-Ray Photoelectron Spectroscopy Analysis of the cupt films Prepared by Ultra-High Vacuum Deposition

In this paper,a thin film of copper phthalocyanine are prepared on Si(111) substrates by ultra high vacuum (UHV) deposition under various conditions.These films are characterized by situated X ray photoelectron spectroscopy (XTP).It is found that the compositions of the UHV deposition CuPc films are usually non stoichiometric,and the Cu content within the films decreases with increasing evaporation temperature,while nitrogen conten within the films increases.The ratio of carbon atoms at aromatic rings to those of porphyrin like ring is less than 3 which is the ratio expected for perfect CuPc,indicating the CuPc molecule is decomposed and/or polymerized during evaporation.