生产型GaN MOCVD(6片机)设备中的压力控制技术

反应室压力控制稳定是保证工艺重复性和陡峭界面生长的关键之一。分析了影响压力控制精度的主要因素,介绍了采用软件、硬件结合的方法,通过闭环压力控制、差压控制、高精度流量控制和补偿气路设计等技术手段,实现高精度压力稳定性和无扰动气体切换,首次在国产生产型GaN-MOCVD(6片机)设备上生长出高质量的多量子阱蓝光LED外延材料。

Pressure controlling technology on plant-size GaN MOCVD (6 wafers)

The stability of pressure in reactor is one of the key point that abtain the repeatability and abrupt interface. The factors that take effect on the controlling accuracy are analyzed, combining software and hardware approaches for pressure stability and gas switching undisturbed are introduced, such as close-loop pressure controlling, difference pressure controlling, accurate flux measuring and controlling and compensating gas line design, so that high quality MQW blue LED epitaxial material is grown initially on domestic plant-size GaN MOCVD system (6片机).