Noise studies in internal field emission diodes

The breakdown process of a zener diode in reverse direction is governed by internal field emission at low voltage and by impact ionization at higher voltage. For breakdown voltage in the transition range between 3 and 6 V, both physical processes appear in combination. Measuring the I–V characteristic and the noise current fluctuations spectral density it is possible to show the zener current multiplication by the multiplication effect described by Tager. In addition the I–V characteristic can be written empirically I = Vⁿ.