| SiC薄膜制备工艺进展 |
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| 引用本文： | 葛金余,杜丕一,韩高荣.SiC薄膜制备工艺进展[J].材料科学与工程学报,1998(1). |
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| 作者姓名： | 葛金余 杜丕一 韩高荣 |
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| 作者单位： | 浙江大学 |
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| 摘 要： | 本文综述了ＳｉＣ薄膜的制备工艺及进展，介绍了物理气相沉积、化学气相沉积、等离子化学气相沉积及光化学气相沉积等各种ＳｉＣ薄膜的制备方法，简单阐述了各种工艺对薄膜性能的影响，评述了各种制备工艺的优缺点。
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| 关 键 词： | SiC薄膜 制备工艺 进展 |
Development of the Preparation Methods of Silicon Carbide Thin Film |
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| Ge Jinyu\ Du Piyi\ Han Gaorong ZheJiang University,Hangzhou.Development of the Preparation Methods of Silicon Carbide Thin Film[J].Journal of Materials Science and Engineering,1998(1). |
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| Authors: | Ge Jinyu\ Du Piyi\ Han Gaorong ZheJiang University Hangzhou |
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| Affiliation: | Ge Jinyu\ Du Piyi\ Han Gaorong ZheJiang University,Hangzhou,310027 |
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| Abstract: | The preparation technology and development of SiC thin film have been reviewed in this paper. All kinds of preparation methods of SiC thin film, such as PVD, CVD, PECVD and photo CVD are introduced. The influence of various techniques on the properties of SiC thin film are also demostrated in brief. In addition, the advantages and disadvantages of all sorts of preparation methods are discussed. |
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| Keywords: | SiC thin film Preparation techniques Development |
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