| Electron Field Emission from Patterned Porous Silicon Film |
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| 引用本文： | SHU Yun-xing GE Bo ZHANG Yong-sheng YU Ke. Electron Field Emission from Patterned Porous Silicon Film[J]. 半导体光子学与技术, 2005, 11(3): 179-183 |
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| 作者姓名： | SHU Yun-xing GE Bo ZHANG Yong-sheng YU Ke |
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| 作者单位： | [1]Dept. of comput. , Luoyang College of Technol. , Luoyang 471003, CHN [2]Dept. of Electron. Eng. , East China Normal University, Shanghai 200062, CHN [3]School of Phys. and Mtcroelectron. , Shandong University, Jinan 250061, CHN |
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| 基金项目： | 国家自然科学基金，Foundation of Graduate Students of East China Normal University，Foundation of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing |
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| 摘 要： | Patterned porous silicon （PS） films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy （SEM）,X-ray diffraction（XRD）,and atomic force microscopy （AFM）.The efficient electron field emission with low turn-on field of about 3.5V/μm was obtained at current density of 0.1μA/cm^2.The electron field emission current density from the patterned PS films reached 1mA/cm^2 under and applied field of about 12.5V/μm.The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays.
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| 关 键 词： | 电场 电子散射 多孔渗水 硅薄膜 纳米结构 半导体 |
| 文章编号： | 1007-0206（2005）03-0179-05 |
| 收稿时间： | 2005-01-22 |
| 修稿时间： | 2005-02-28 |
Electron Field Emission from Patterned Porous Silicon Film |
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| SHU Yun-xing,GE Bo,ZHANG Yong-sheng,Yu Ke. Electron Field Emission from Patterned Porous Silicon Film[J]. Semiconductor Photonics and Technology, 2005, 11(3): 179-183 |
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| Authors: | SHU Yun-xing GE Bo ZHANG Yong-sheng Yu Ke |
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| Abstract: | Patterned porous silicon (PS) films were synthesised by using hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). The efficient electron field emission with low turn-on field of about 3.5 V/μm was obtained at current density of 0.1 μA/cm2. The electron field emission current density from the patterned PS films reached 1 mA/cm2 under an applied field of about 12.5 V/μm. The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays. |
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| Keywords: | Electron field emission Synthesis Patterned porous silicon Nanostructure ZnO |
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