Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on Inp surfaces |
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Authors: | M. Borgström T. Bryllert B. Gustafson J. Johansson T. Sass L. E. Wernersson W. Seifert L. Samuelson |
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Affiliation: | (1) University of Lund, Solid State Physics, Box 118, S-221 00, Sweden |
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Abstract: | A site control technique for individual InAs quantum dots (QDs) formed by self-assembling has been developed, using scanning electron microscope (SEM) assisted nano-deposition and metal organic vapor phase epitaxy (MOVPE). In a first step we characterize a device with randomly distributed InAs QDs on InP, using resonant tunneling and transmission electron microscopy (TEM). Secondly, we use nano-scale deposits, created at the focal point of the electron beam on an InP based heterostructure, as “nano growth masks”. Growth of a thin InP layer produces nano-holes above the deposits. The deposits are removed by oxygen plasma etching. When InAs is supplied on this surface, QDs are self-assembled at the hole sites, while no InAs dots are observed in the flat surface region. A vertical single electron tunneling device is proposed, using the developed technique. |
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Keywords: | MOVPE InP/InAs quantum dots self-assembling resonant tunneling |
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