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IZO/Al/GZO multilayer films to replace ITO films
Authors:Chongmu Lee  R P Dwivedi  Wangwoo Lee  Chanseok Hong  Wan In Lee  Hyoun Woo Kim
Affiliation:(1) Department of Material Science and Engineering, Inha University, 253 Yonghyeon-dong, Incheon, 402-751, Republic of Korea;(2) Department of Chemistry, Inha University, 253 Yonghyeon-dong, Incheon, 402-751, Republic of Korea
Abstract:Multilayer transparent conducting oxide (TCO) film structures have been designed and fabricated to achieve both high conductivity and high transmittance. In this article we report a buffering method and introduction of an aluminum (Al) interlayer to enhance the electrical conductivity of the IZO/Al/GZO/ZnO multilayer film on glass. Hall measurement results show that this multilayer film has a remarkable increase in mobility compared to those without using an Al interlayer. The surface morphology shows a decrease in surface roughness as the Al layer thickness increases. We have shown that the use of a thin Al interlayer enhances the electrical conductivity without sacrificing its optical transmittance much. By optimizing the thickness of the Al layer, the lowest resistivity of 2.2 × 10−4 Ω cm and an average transmittance higher than 75% in a range from 400 to 800 nm have been achieved. These properties are acceptable for future TCO applications.
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