IZO/Al/GZO multilayer films to replace ITO films |
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Authors: | Chongmu Lee R P Dwivedi Wangwoo Lee Chanseok Hong Wan In Lee Hyoun Woo Kim |
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Affiliation: | (1) Department of Material Science and Engineering, Inha University, 253 Yonghyeon-dong, Incheon, 402-751, Republic of Korea;(2) Department of Chemistry, Inha University, 253 Yonghyeon-dong, Incheon, 402-751, Republic of Korea |
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Abstract: | Multilayer transparent conducting oxide (TCO) film structures have been designed and fabricated to achieve both high conductivity
and high transmittance. In this article we report a buffering method and introduction of an aluminum (Al) interlayer to enhance
the electrical conductivity of the IZO/Al/GZO/ZnO multilayer film on glass. Hall measurement results show that this multilayer
film has a remarkable increase in mobility compared to those without using an Al interlayer. The surface morphology shows
a decrease in surface roughness as the Al layer thickness increases. We have shown that the use of a thin Al interlayer enhances
the electrical conductivity without sacrificing its optical transmittance much. By optimizing the thickness of the Al layer,
the lowest resistivity of 2.2 × 10−4 Ω cm and an average transmittance higher than 75% in a range from 400 to 800 nm have been achieved. These properties are acceptable
for future TCO applications. |
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