SiC 单晶片化学机械研磨试验研究

目的提高Si C单晶片的材料去除率,改善加工后的表面质量。方法进行研磨液试验,利用极差法得到研磨液的最优配比和研磨液成分中影响去除率的主次因素顺序;对主要影响因素进行单因素试验并考察对材料去除率的影响。结果研磨液的质量为50 g,最优配方为:助研剂、分散剂、增稠剂、润滑剂、磨料A、磨料B的质量分别为9,7,5,3,3,5 g,其余为调和剂,磨料A和磨料B的粒度均为W28。结论影响材料去除率的主要因素为磨料粒度,粒度越大,材料去除率越高。

Experimental Study on Chemical Mechanical Lapping of SiC Single Crystal Wafer

Objective To increase the material removal rate of SiC single crystal wafer and improve the surface quality after processing. Methods Grinding fluid experiment was carried out,and the range method was used to get the optimal proportion of grinding fluid and the importance order of the influencing factors for the removal rate in the grinding fluid composition. Single factor tests were performed for the major influencing factors and their influences on the material removal rate were investigated. Results The weight of the grinding fluid was 50 g, and the optimal formula of the grinding fluid was: 9 g grind assistant agent, 7 g dispersing agent, 5 g thickening agent, 3 g lubricant, 3 g abrasive A and 5 g abrasive B, the other components were all blending agents. The particle size of abrasive A and abrasive B was both W28. Conclusion The main factor affecting the material removal rate was the particle size of abrasive. The larger the size, the higher the material removal rate.