Sl-GaAs单晶的热稳定性研究

SI-GaAs衬底材科的热稳定性对于用直接离子注入工艺制作GaAs场效应器件及集成电路是至关重要的.本文采用变温霍耳效应测量、光注入瞬态电流谱(OTCS)和原子吸收光谱等方法研究了热稳定性差的不掺杂LEC SI-GaAs单晶.结果表明,原子吸收光谱分析发现此晶体存在6.7×10~(15)cm~(-3)Fe杂质,其他两种方法观察到一个～0.62eV深能级.文中推测这是与杂质Fe有关的深受主,认为它对不掺杂LBC SI-GaAs单晶的热稳定性可能有重大影响.

The Thermal Stability of Undoped LEC SI-GaAs Single Crystals

The thermal stability in SI-GaAs substrates is a critical issue in the fabrication of GaAs field effect transistors and integrated circuits by direct Ion implantation. In this paper, a thermally unstable undoped LEC SI-GaAs crystal has been investigated using tempsrature-dependent Hall measurement, OTCS and atomic absorption spectroscopy etct In the above sample, the impurity Fe of 6.7×1015cm-3 is found by atomic absorption spectroscopy. A deep level at -0.62eV is observed by using other analysis techniques and is tentatively assigned to the deep acceptors related to the impurity Fe, which may have significant effect on the thermal stability of undoped LEC SI-GaAs Crystals.