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The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2 |
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| Authors: | Y.C. Chen J. Xu X.H. Fan X.F. Zhang L. Han D.Y. Lin Q.H. Li C. Uher |
| Affiliation: | 1. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;2. State Key Laboratory for Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;3. Corrosion and Protection Center, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;4. Shandong RealForce Energy Co., Ltd., 277600, Shandong 277600, China;5. Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA |
| Abstract: | The as yet unresolved microstructure of the periodic layers formed in the reactive diffusion system Mg/SiO2 was clarified by using high-resolution field-emission SEM. The periodic layered structure actually consists of the single-phase layer of Mg2Si and the two-phase layer of (Mg2Si + MgO) alternated within the reaction zone. According to the experimental observations and in line with the diffusion-induced stresses model, the mechanism controlling this phenomenon could be attributed to the stresses induced by the difference in interface growth rates of Mg2Si and MgO phases within the layer. When the elastic deformation of the slow-growing aggregated-MgO phase reaches its elastic maximum, it will be split off from the reaction front by the neighboring Mg2Si phase and a new periodic layer forms. The computer simulation results are coinciding well with the experimental data. |
| Keywords: | A. Composites, based on the intermetallics matrix A. Nanostructured intermetallics B. Diffusion D. Microstructure G. Thermoelectric power generation |
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