| 自由电子激光辐照半导体多量子阱的研究 |
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| 引用本文： | 邹睿,林理彬,张猛,张国庆,李永贵. 自由电子激光辐照半导体多量子阱的研究[J]. 中国激光, 2003, 30(9): 852-854 |
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| 作者姓名： | 邹睿 林理彬 张猛 张国庆 李永贵 |
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| 作者单位： | 1. 四川大学物理系,四川,成都,610064
2. 中国科学院高能物理所,北京,100080 |
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| 基金项目： | 国家自然科学基金 (编号 :6 0 0 880 2 )，全国高校博士点基金资助项目 |
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| 摘 要： | 利用低温光荧光谱研究了自由电子激光辐照对GaAs/AlGaAs多量子阱光学性质的影响。用波长为 8 92μm ,光功率密度相应于电场强度为 2 0kV/cm的自由电子激光辐照多量子阱 6 0min ,发现量子阱特征峰 797nm经过辐照后峰值发生红移至 812nm ,波形展宽 ,峰高降低。对此结果进行了讨论 ,并与电子辐照的情况做了比较。
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| 关 键 词： | 激光技术 量子阱 自由电子激光辐照 低温光荧光谱 红移 |
| 收稿时间： | 2002-03-29 |
Free Electron Laser Irradiation Effects of GaAs/AlGaAs Quantum Wells |
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| ZOU Rui ,LIN Li-bin ,ZHANG Meng ,ZHANG Guo-qing ,LI Yong-gui. Free Electron Laser Irradiation Effects of GaAs/AlGaAs Quantum Wells[J]. Chinese Journal of Lasers, 2003, 30(9): 852-854 |
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| Authors: | ZOU Rui LIN Li-bin ZHANG Meng ZHANG Guo-qing LI Yong-gui |
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| Affiliation: | ZOU Rui 1,LIN Li-bin 1,ZHANG Meng 1,ZHANG Guo-qing 2,LI Yong-gui 2 1Department of Physics,Sichuan University,Chengdu,Sichuan 610064,China 2Institute of High Energy Physics,The Chinese Academy of Sciences,Beijing 100080,China |
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| Abstract: | Photoluminescence (PL) was observed from GaAs/AlGaAs quantum wells structure excited by mid-infrared free electron laser (FEL) irradiation. The experimental results showed that the characteristic PL peak of quantum wells was shifted to longer wavelength (red shift) and the intensity was decreased much after FEL irradiation. The results are discussed and compared with that of electron irradiation. |
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| Keywords: | laser technique quantum well free electron laser irradiation photoluminescence spectra red shift |
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