Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles |
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| Authors: | M V Badylevich I V Blokhin Yu I Golovin A A Dmitrievskiĭ S V Kartsev N Yu Suchkova M Yu Tolotaev |
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| Affiliation: | (1) Institute of the Solid-State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia;(2) Derzhavin State University, Tambov, 392622, Russia |
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| Abstract: | Deep-level transient spectroscopy is used to study the dependence of the concentration of the donor-and acceptor-type radiation defects in silicon on the duration of irradiation with low-intensity fluxes of β particles (I ≈ 9 × 105 cm?2 s?1). It is found that the concentrations of the defects C i , C i -C s , and/or V-O in n-Si and the defects V-B, C i -O i , and/or V 2-O-C in p-Si vary nonmonotonically. |
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