| S波段GaN大功率放大器的设计与实现 |
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| 引用本文： | 杨斐,周永伟,马云柱,王海涛.S波段GaN大功率放大器的设计与实现[J].火控雷达技术,2011(3):86-90. |
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| 作者姓名： | 杨斐 周永伟 马云柱 王海涛 |
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| 作者单位： | 西安电子工程研究所,西安,710100 |
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| 摘 要： | 本文介绍了基于新型GaN宽禁带半导体材料的大功率器件的特点和优势，采用微波仿真软件ADS对一款S波段的GaNMOSFET进行优化仿真设计，得到了良好的仿真结果，并给出了该功放的实物和测试数据。测试结果表明，该功放适用于2．1～2．7GHz，功率量级为IOOW，连续波和脉冲制式均可工作，对GaNMOSFET功率器件高增益...
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| 关 键 词： | S波段 GaN MOSFET 宽禁带 |
Design and Implementation of An S-Band GaN High Power Amplifier |
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| Yang Fei,Zhou Yongwei,Ma Yunzhu,Wang Haitao.Design and Implementation of An S-Band GaN High Power Amplifier[J].Fire Control Radar Technology,2011(3):86-90. |
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| Authors: | Yang Fei Zhou Yongwei Ma Yunzhu Wang Haitao |
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| Affiliation: | (Xi′an Electronic Engineering Research Institute;Xi′an 710100) |
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| Abstract: | Features and advantages of high-power amplifiers based on GaN semiconductor materials with wide bandgap are introduced.Optimization simulation design of an S-band GaN MOSFET is conducted by using of microwave simulation software ADS,good simulation results are obtained and test data are provided.The test results indicate that power-level of the power amplifier can exceed 100W at 2.1 to 2.7GHz,and it can work both in pulse and continuous wave modes,and it also proves that the GaN MOSFET power components have... |
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| Keywords: | S-band GaN MOSFET wide bandgap |
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