| 带浅沟槽隔离的双光电二极管电路模型研究 |
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| 引用本文： | 王倩,毛陆虹,梁惠来,张世林,郭维廉,黄家乐.带浅沟槽隔离的双光电二极管电路模型研究[J].固体电子学研究与进展,2007,27(3):356-360. |
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| 作者姓名： | 王倩 毛陆虹 梁惠来 张世林 郭维廉 黄家乐 |
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| 作者单位： | 天津大学电子信息工程学院,天津,300072 |
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| 基金项目： | 国家自然科学基金
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天津市应用基础研究项目 |
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| 摘 要： | 通过器件模拟并结合实验结果,在已有PIN(Positive intrinsic negative)和DPD(Double photo-diodes)探测器电路模型基础之上,对带浅沟槽隔离(STI)准PIN结构的DPD探测器电路模型进行了探讨。模拟了由深N阱和浅沟槽给DPD带来的性能上的改变,同时结合实验结果,从响应电流和探测器的等效串联电阻两方面对电路模型进行了修正,得到了符合该器件的较准确电路模型。
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| 关 键 词： | 硅光电探测器 电路模型 响应电流 等效串联电阻 |
| 文章编号： | 1000-3819（2007）03-356-05 |
| 修稿时间： | 2006-03-09 |
Research on the Equivalent Circuit Model of the Double Photo-diodes with Shallow Trench Isolation |
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| WANG Qian,MAO Luhong,LIANG Huilai,ZHANG Shilin,GUO Weilian,HUANG Jiale.Research on the Equivalent Circuit Model of the Double Photo-diodes with Shallow Trench Isolation[J].Research & Progress of Solid State Electronics,2007,27(3):356-360. |
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| Authors: | WANG Qian MAO Luhong LIANG Huilai ZHANG Shilin GUO Weilian HUANG Jiale |
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| Affiliation: | School of Electronic Information Eng. , Tianjin Uni. , Tianjin, 300072, CHN |
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| Abstract: | On the basis of PIN (Positive Intrinsic Negative)and DPD (Double Photo-Diodes) detector equivalent circuit models, this paper discusses about the equivalent circuit model of the quasi-PIN structure DPD with shallow trench isolation(STI) by analyzing device simulation and experimental results. After simulating, the improvement performance caused by deep N well and STI is compared with the experimental results. Then the existing model is modified from two aspects—response current and equivalent series resistance. At the end of the paper, more accurate and proper circuit model for the device is got. |
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| Keywords: | Si based photo-detector circuit model response current equivalent series resistance |
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