DMSO掺杂PEDOT:PSS薄膜太赫兹波段介电性能研究

导电聚合物材料聚(3,4-乙撑二氧噻吩):聚(4-苯乙烯磺酸盐)(PEDOT:PSS)是一种在太赫兹波段很有潜力的多功能材料,PEDOT:PSS薄膜的介电性能可以通过掺杂有机溶剂二甲基亚砜(DMSO)来改变.文中利用太赫兹时域光谱(terahertz time-domain spectroscopy, THz-TDS)技术对DMSO掺杂PEDOT:PSS薄膜在太赫兹波段的介电常数进行研究,结合Drude-Smith模型计算了DMSO掺杂PEDOT:PSS薄膜的载流子浓度和载流子迁移率,全面分析了DMSO掺杂PEDOT:PSS薄膜的介电性能.研究表明:薄膜的介电性能可以通过调节掺杂量而改变,当掺杂浓度提高至15 vol%时,薄膜表现出金属特征,而未掺杂和低掺杂浓度的薄膜仍然表现半导体特征.

Dielectric properties of DMSO-doped-PEDOT: PSS in the THz range

Poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) is a promising candidate for terahertz (THz) devices. Its dielectric properties can be changed by the dopant dimethylsulfoxide (DMSO). In this study, the dielectric properties of DMSO-doped-PEDOT:PSS films were investigated using terahertz time-domain spectroscopy (THz-TDS) measurements. The values of the carrier density and mobility were also determined by fitting the dielectric permittivity to the Drude-Smith model. The properties of PEDOT:PSS films can be changed by adjusting the doping concentration. When the doping concentration is increased to 15 vol%, the film exhibits metal characteristics, while the pristine and low-doped film still exhibits semiconductor characteristics.