Plasma density measurement and downstream etching of silicon and silicon oxide in Ar/NF3 mixture remote plasma source

In this study, plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/ NF₃ gas mixtures using a microwave cutoff probe. The measured plasma density is in the range of 10 ¹⁰ –10 ¹¹ cm ^?3 in the discharge conditions with RPS powers of 2–4 kW and gas pressures of 0.87–4 Torr. The plasma density decreased with increasing gas pressures and RPS powers under various Ar/ NF₃ mixing ratios. This decrease in the plasma density measured at the fixed measurement position (plume region) can be understood by the reduction of the electron energy relaxation length with increases in the gas pressures and mixing ratio of NF₃/(Ar / NF₃). We also performed downstream etching of silicon and silicon oxide films in this system. The etch rate of the silicon films significantly increases while the silicon oxide is slightly etched with the gas pressures and powers. It was also found that the etch rate strongly depends on the wafer position on the processing chamber electrode, and that the etch selectivity reached 96–131 in the discharge conditions of RF powers (3730–4180 W) and gas pressures (3.6–4 Torr).