湿式机械化学磨削单晶硅的软磨料砂轮及其磨削性能

针对干式机械化学磨削(Mechanical chemical grinding, MCG)单晶硅过程中易产生磨削烧伤、粉尘多、加工环境差等问题，研制一种可用于湿式MCG单晶硅的新型软磨料砂轮，并对砂轮的磨削性能及其磨削单晶硅的材料去除机理进行研究。根据湿式机械化学磨削单晶硅的加工原理和要求，制备出以二氧化硅为磨料、改性耐水树脂为结合剂的新型软磨料砂轮。采用研制的软磨料砂轮对单晶硅进行磨削试验，通过检测加工硅片的表面/亚表面质量对湿式MCG软磨料砂轮的磨削性能进行分析，并与传统金刚石砂轮、干式MCG软磨料砂轮的磨削性能进行对比。采用X射线光电子能谱仪对磨削前后硅片的表面成分进行检测，分析湿式MCG加工硅片过程中发生的化学反应。结果表明，采用湿式MCG软磨料砂轮加工硅片的表面粗糙度Ra值为0.98 nm，亚表面损伤层深度为15 nm，湿式MCG软磨料砂轮磨削硅片的表面/亚表面质量远优于传统金刚石砂轮，达到干式MCG软磨料砂轮的加工效果，可实现湿磨工况下硅片的低损伤磨削加工。在湿式MCG过程中，单晶硅、二氧化硅磨粒与水发生了化学反应，在硅片表面生成易于去除的硅酸化合物，硅酸化合物进一步通过砂...

Development and Evaluation of Soft Abrasive Grinding Wheel for Silicon Wafer in Wet Mechanical Chemical Grinding

In order to avoid the grinding burns and grinding dust during dry mechanical chemical grinding (MCG), a new soft abrasive grinding wheel (SAGW) is developed for silicon wafer in wet MCG. The grinding performance of new SAGW and the corresponding material removal mechanism during silicon wafer grinding are systematically investigated. Based upon the machining principle of wet MCG, the new SAGW employs SiO₂ as wheel abrasives, and modified water resistant resin as wheel bond. The silicon wafer grinding experiments are conducted to analyze the grinding performance of newly developed SAGW performance, and compared with the traditional diamond grinding wheel and the previous SAGW of dry MCG in terms of surface and subsurface quality of ground silicon wafer. The surface component of silicon wafer in wet MCG process is examined using X-ray photoelectron spectrometer, and the corresponding chemical reactions are analyzed. The results show that the newly developed SAGW could be able to produce a silicon wafer surface with a surface roughness Raof 0.98 nm and subsurface damage layer is 15 nm thick, which is significantly better than that ground using the traditional diamond wheel and similar to that obtained from the previous SAGW of dry MCG process. Chemical reactions occur among monocrystalline silicon, SiO₂ abrasives and deionized water during wet MCG process, and the silicate is formed on the topmost ground surface of the silicon surface and easily removed by the mechanical abrasion involved in the MCG process, generating an ultra-smooth and low-damage surface by utilizing the mechanical friction and chemical reaction.