保温时间对锰氧化物刻蚀金刚石单晶的影响

研究了在不同保温时间下MnO₂对金刚石单晶的表面刻蚀, 通过扫描电子显微镜和拉曼光谱对刻蚀后金刚石单晶不同晶面的表面形貌和刻蚀机理的进行了表征与分析, 并对腐蚀过程中金刚石表现出来的各向异性进行了探讨。结果表明: 当金刚石和MnO₂质量比为1:5时, 金刚石单晶的刻蚀程度随着保温时间的延长而增大; 在相同保温时间下, {111}晶面比{100}晶面刻蚀严重; 金刚石表面腐蚀后的形貌与对应晶面的碳原子排列有关, {100}面倾向于形成四边形的刻蚀坑, 而{111}面则会形成轮廓为三角形的腐蚀坑, 且金刚石单颗粒的抗压强度随刻蚀时间的延长而下降; 刻蚀机理为MnO₂与金刚石表面C原子发生反应, 导致金刚石表面发生刻蚀。

Effect of holding time on etched diamond single crystal by manganese oxide

The surface etching of diamond single crystal by MnO₂ at different holding time was studied in this paper. The surface morphology and etching mechanism of the etched diamond single crystal were characterized and analyzed by scanning electron microscope and Raman spectrum. In addition, the anisotropy etching of diamond was discussed. The results show that, when the mass ratio of diamond to MnO₂ is 1:5, the etching degree of diamond single crystal increases with the prolongation of holding time, and the etching of {111} face is more serious than that of {100} face at the same holding time. The morphology of the etched diamond surface is related to the arrangement of carbon atoms on the corresponding crystal faces, so the etching pits of the {111} face are approximate triangular, while the etching pits of the {100} face are more quadrilateral. Furthermore, the compressive strength of the etched diamond single crystal decreases with the prolongation of etching time. The etching mechanism of diamond single crystal by MnO₂ is demonstrated that MnO₂ reacts with C atoms on the diamond surface to make the diamond surface etched.