首页 | 本学科首页   官方微博 | 高级检索  
     


Relation between etching profile and voltage–current shape of sintered SiC etching by atmospheric pressure plasma
Authors:D C SEOK  S R YOO  K I LEE  et al.
Abstract:Sintered silicon carbide (SiC) was etched by a dielectric barrier discharge source. A high voltage bipolar pulse was used with helium gas for the plasma generation. One stable filament plasma was generated and could be used for SiC etching. As the processing gas (NF3) mixing rate increased, the width and depth of the etching profile became narrower and deeper. The differentiated V–Q Lissajous method was used for measuring the capacitances (Ceq) of the electrode after the plasma turned on. The width of the etching profile was proportional to Ceq. As the current peak value Ismx of the substrate current increased, the volume removal rate of SiC increased. The etch depth was proportional to the ratio of Ismx to Ceq. Additionally, because of the different characteristics of the plasma disks on SiC substrate by the voltage polarity, the etching profile was unstable. However, in high NF3 mixing process, the etching profile became stable and deeper.
Keywords:dielectric barrier discharge   silicon carbide   plasma etching   filament discharge   surface charge  
本文献已被 万方数据 等数据库收录!
点击此处可从《等离子体科学和技术》浏览原始摘要信息
点击此处可从《等离子体科学和技术》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号