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硼及其协同掺杂金刚石块体的研究进展
引用本文:王志伟,邹芹,李艳国,尹育航,陈红光,王明智. 硼及其协同掺杂金刚石块体的研究进展[J]. 金刚石与磨料磨具工程, 2019, 39(6): 99-106. DOI: 10.13394/j.cnki.jgszz.2019.6.0017
作者姓名:王志伟  邹芹  李艳国  尹育航  陈红光  王明智
作者单位:燕山大学 机械工程学院,河北 秦皇岛 066004;燕山大学 机械工程学院,河北 秦皇岛 066004;燕山大学,亚稳材料制备技术与科学国家重点实验室,河北 秦皇岛 066004;燕山大学,亚稳材料制备技术与科学国家重点实验室,河北 秦皇岛 066004;广东奔朗新材料股份有限公司,广东 佛山 528313;中南钻石有限公司,河南 南阳 473000
摘    要:掺入硼等杂质元素可以使金刚石获得半导体特性,利用高温高压法可以制备出性能优良的金刚石半导体材料。本文介绍了硼及其协同掺杂金刚石块体材料的研究现状,综述了掺杂对金刚石的形貌、结构及性能的影响,阐明了制备过程中影响掺杂金刚石质量的因素,展望了硼及其协同掺杂金刚石块体材料的应用前景。 

关 键 词:高温高压  金刚石块体  硼及其协同掺杂  半导体

Development of boron and its synergistic doped diamond blocks
WANG Zhiwei,ZOU Qin,LI Yanguo,YIN Yuhang,CHEN Hongguang,WANG Mingzhi. Development of boron and its synergistic doped diamond blocks[J]. Diamond & Abrasives Engineering, 2019, 39(6): 99-106. DOI: 10.13394/j.cnki.jgszz.2019.6.0017
Authors:WANG Zhiwei  ZOU Qin  LI Yanguo  YIN Yuhang  CHEN Hongguang  WANG Mingzhi
Affiliation:1. School of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, Hebei, China;2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China;3. Guangdong Monte-Bianco New Material Co., Ltd., Foshan 528313, Guangdong, China;4. Zhongnan Diamond Co., Ltd., Nanyang 473000, Henan, China
Abstract:The semiconductor properties of diamond can be obtained by adding impurity elements like boron. Diamond semiconductor materials with excellent properties can be prepared by high temperature and pressure method. This paper introduces the research development of boron and its co-doped diamond block materials. It summarizes the influence of doping on the morphology, structure and properties of diamond. The factors that affect the quality of doped diamond under high temperature and pressure are clarified. In the end, this paper looks forward to the application prospect of boron and its co-doped diamond block materials. 
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