ESD作用下晶闸管dV/dt触发导通规律研究

针对电磁脉冲作用下晶闸管（silicon controlled rectifier，SCR）意外导通事故频发的问题，选择静电放电（electrostatic discharge，ESD）作为典型电磁脉冲源，对比分析了小电流SCR的ESD敏感度特性，确定了ESD作用下SCR的失效模式为门极电压作用失效、阴阳极断路.采用理论和试验相结合的方法得出了SCR意外导通的开启时间仅与阳极电压和器件本身特性有关的结论，并进一步通过方波电磁脉冲注入的对比试验，揭示了ESD作用下SCR因dV/dt触发导通的开启时间只与ESD注入电压有关:注入电压越高，开启时间越短.

Conducting rules of the thyristors triggered by dV/dt under the ESD conditions

This paper introduces the electrostatic discharge (ESD) pulse which is selected as the typical source to find out the conducting rules of thyristors in these examinations. The ESD sensitivity characteristics of the silicon controlled rectifier (SCR) with low current is compared and analyzed. The failure mode of the SCR confirms that the gate is out of operation, or the circuit between the Anode and the cathode is broken. It has been found that the conduction time of the SCR triggered by dV/dt is only related to the structure and material properties of the SCR itself as well as the anode voltage. Through the comparative study in square wave pulse injected tests, we find that the conduction time of the SCR triggered by dV/dt under the ESD conditions is only related to the ESD injected voltage, and the higher the injected voltage is, the shorter the conduction time.