Defect controlled diffusion of lithium ions in Mn doped V2O5 for potential applications as cathode material |
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| Affiliation: | 1. Department of Physics, Chandigarh University, Gharuan, Mohali, Punjab, India;2. Govt. College Dhaliara, Distt., Kangra, Himachal Pradesh, India;3. Department of Chemistry, University of São Paulo, Ribeirão, Ribeirão Preto, SP, Brazil;4. Elettra-Sincrotrone, Strada Statale 14, AREA Science Park Basovizza 34149, Trieste Italy;1. Department of Electronics and Communication Engineering, National Institute of Science and Technology, Berhampur, India;2. Department of Electronics and Telecommunication Engineering, Kalinga Institute of Industrial Technology, Bhubaneswar, India;3. School of Chemistry, University of Glasgow, Glasgow, United Kingdom;4. Department of Chemistry and Biomolecular Science, Clarkson University, Potsdam, New York, USA;5. Department of Chemistry, National Institute of Science and Technology, Berhampur, India;6. Department of Biomedical and Environmental Science, National Tsing Hua University, Taiwan, ROC;7. Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC;8. Department of Materials Science and Engineering and Chemical Engineering, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Leganés, Madrid, Spain;1. College of Materials and Environmental Engineering, Hangzhou Dianzi University, No. 2 Street, Hangzhou, 310018, China;2. School of Science, Hangzhou Dianzi University, Hangzhou, 310018, China;3. Lab for Nanoelectronics and Nano Devices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou, 310018, China;4. Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, No. 4800 Caoan Highway, Shanghai, China;1. Key Laboratory for Anisotropy and Texture of Material (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning, 110819, PR China;2. Foshan Graduate School of Innovation, Northeastern University, Foshan, 528311, PR China;3. Key Laboratory of Dielectric and Electrolyte Functional Material, Northeastern University, Qinhuangdao, Hebei, 066004, PR China;4. College of Environmental and Chemical Engineering, Dalian University, Dalian, Liaoning, 116622, PR China;1. Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, China;2. College of Science, Guilin University of Technology, Guilin, 541004, China |
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| Abstract: | With a motivation to unravel the effect of cation (Mn) doping-induced modifications in structure, charge transfer resistance, and Li-ion diffusion in V2O5 a systematic study using X-ray diffraction (XRD), Raman Spectroscopy and electrochemical impedance spectroscopy (EIS) has been employed using three electrodes configuration. Structural investigations using XRD suggest the selective diffusion of Mn ion towards the c-axis at a low doping percentage. Raman spectroscopy suggests the shift in 994 cm-1 modes which substantiates the uniaxial diffusion of Mn ions. Nyquist plots show that interfacial charge transfer resistance is highest for the lowest doping i.e., 1% Mn-doped V2O5 and exhibits the lowest diffusion coefficient as compared to other doped V2O5 samples. Specific capacitance calculated from cyclic voltammetry is found to be highest for the 4% Mn-doped V2O5 sample. Moreover, diffusion of Lithium ions improves with an increase in doping concentration due to higher concentration of defects as evident from Δd/d and Nelson–Riley factor (NRF) for pure V2O5 and Mn-doped V2O5. |
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| Keywords: | Vanadium pentoxide Solid-state reaction Rietveld refinement Raman shift |
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