Enhancing the temperature coefficient of resistance of Pt thin film resistance-temperature-detector by short-time annealing |
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| Affiliation: | 1. School of Mechanical, Electrical and Information Engineering, Shandong University, Weihai, 264209, China;2. School of Space Science and Physics, Shandong University, Weihai, 264209, China;3. Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China;1. School of Materials Science and Engineering, Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin, 300072, PR China;2. Aerospace Business Department, China Academy of Launch Vehicle Technology, Beijing, 100076, PR China;3. National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, PR China;1. Yantai University, Yantai, 264005, Shandong, China;2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China;3. School of Materials Science and Engineering, University of Jinan, Jinan, 250022, Shandong, China;4. Shandong Tongfang Luying Electronic Co., Ltd., Yinan, 276300, Shandong, China;1. College of Chemistry, Nankai University, Tianjin, 300071, PR China;2. Jiangsu Vocational College of Medicine, Jiangsu, 224005, PR China;3. The Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Tianjin Key Lab of Metal and Molecule-based Material Chemistry, National Demonstration Center for Experimental Chemistry Education, Nankai University, Tianjin, 300071, PR China |
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| Abstract: | In this work, we report the influence of annealing time on the electrical properties of Pt thin film resistance-temperature-detectors (RTD) with Ti adhesion layers. It is found that the temperature coefficient of resistance (TCR) of the Pt thin film RTD strongly depends on the air annealing time. Increasing the annealing durations from 1, 3, 10 to 60 min at 900 °C, the TCR tends to rise up firstly, and then drops down. A maximum TCR of 3.2 × 10−3/°C at 25 °C is achieved in the RTD annealed for 3 min, which is larger than most of other reported values. It is believed that the annealing time of 3 min may be sufficient to enlarge the grain size and to reduce the lattice defects, giving rise to the maximum TCR by decreasing the resistance at 25 °C. On the contrary, prolonging the annealing duration causes the interdiffusion and oxidation Ti significantly, which has been clearly evidenced by the depth analyses of X-ray photoelectron spectroscopy. Such interdiffusion and oxidation of Ti reduces the TCR by increasing the resistance. |
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| Keywords: | Pt thin film Resistance-temperature-detector Temperature coefficient of resistance Rapid thermal annealing Annealing duration |
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