| 高精度硅电容压力传感器的研究 |
| |
| 引用本文： | 李昕欣 鲍敏杭. 高精度硅电容压力传感器的研究[J]. 仪表技术与传感器, 1996, 0(10): 7-10 |
| |
| 作者姓名： | 李昕欣 鲍敏杭 |
| |
| 作者单位： | [1]沈阳仪器仪表工艺研究所 [2]复旦大学电子工程系 |
| |
| 基金项目： | 八五攻关项目，国家自然科学基金 |
| |
| 摘 要： | 本文介绍了一种采用微机械技术形成的电容压力传感器。在设计上采用完全对称的三层结构，从而较好地消除由温度特性不匹配造成的漂移。利用Ｄｉｏｄｅ－ｑｕａｄ接口电路的输出增益反馈方式基本消除了器材固有的非线性，使传感器的精度大大提高。
|
| 关 键 词： | 电容 压力传感器 传感器 硅电容 |
A Micromachined Si Capacitive Pressure Sensor |
| |
| Li Xinxin,Zhang Chundi and Pang ShixinShenyang Institute of Instrumentation Technology,Shenyang .Bao Minhang and Yang Heng Dept. of E. E.,Fudan University,Shanghai .. A Micromachined Si Capacitive Pressure Sensor[J]. Instrument Technique and Sensor, 1996, 0(10): 7-10 |
| |
| Authors: | Li Xinxin Zhang Chundi Pang ShixinShenyang Institute of Instrumentation Technology Shenyang .Bao Minhang Yang Heng Dept. of E. E. Fudan University Shanghai . |
| |
| Affiliation: | Li Xinxin,Zhang Chundi and Pang ShixinShenyang Institute of Instrumentation Technology,Shenyang 110043.Bao Minhang and Yang Heng Dept. of E. E.,Fudan University,Shanghai 200433. |
| |
| Abstract: | Described in this paper is a micromachined siliconcapacitive pressure sensor. The temperature drift of the sensor due to thermal mismatch is e-liminated by adopting a symmetric 3-layer structure, and the inherent nonlin-earity is reduced by output-gain-feedback. Therefore, the measuring accuracy is much improved. |
| |
| Keywords: | Micromachining Capacitive Pressure Sensor. |
| 本文献已被 CNKI 维普 等数据库收录！ |
