| 微机械薄膜低应力工艺及技术的研究 |
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| 引用本文： | 邹泉波,刘理天.微机械薄膜低应力工艺及技术的研究[J].仪表技术与传感器,1996(8):19-21,28. |
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| 作者姓名： | 邹泉波 刘理天 |
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| 作者单位： | 清华大学微电子学研究所，清华大学微电子学研究所，清华大学微电子学研究所 北京市 100084，北京市 100084，北京市 100084 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 本文研究了硅表面微机械加工薄膜的形成工艺及技术。通过调整各种薄膜生长、掺杂以及退火的条件，得到了较低的薄膜残余应力（ＬＰＣＶＤ多晶硅膜３０ＭＰａ压应力，ＬＰＣＶＤ富硅氮化硅帮ＰＥＣＶＤ氮化硅膜约１００ＭＰａ张应力，Ａｌ膜在３０ＭＰａ范围内由压应力到张应力变化）。另外，采用了复合膜和纹膜技术，用于大幅度地降低薄膜应力，取得了预计的结果。
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| 关 键 词： | 微机械 低应力 薄膜 |
Study of Low Stress Technology in Micromachining |
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| Zou Quanbo,Liu Litian and Li Zhijian
Tsinghua University,Beijing ..Study of Low Stress Technology in Micromachining[J].Instrument Technique and Sensor,1996(8):19-21,28. |
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| Authors: | Zou Quanbo Liu Litian and Li Zhijian
Tsinghua University Beijing |
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| Affiliation: | Zou Quanbo,Liu Litian and Li Zhijian
Tsinghua University,Beijing 100084. |
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| Abstract: | IC-compatible processes and corrugated film technology have been investigated in this paper to reduce the intrinsic stress of thin films. Different materials have been considered, e. g. , polysilicon, nitride and aluminum, and the results show that for phosphorus-doped polysilicon, such very low stress level as -30 MPa for LPCVD Si3N4 about 100 MPa in tension has been achieved. The corrugated film is of higher sensitivity than that of flat films. |
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| Keywords: | Stress Thin Corrugated Film |
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