Insulating ZnO film on silicon for MIS application |
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| Authors: | A Dutta S Basu |
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| Affiliation: | (1) Materials Science Centre, Indian Institute of Technology, 721 302 Kharagpur, India |
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| Abstract: | High resistive zinc oxide thin film (∼ 0·5 μm) was deposited on single crystalp-silicon (100) wafers by an inexpensive spray-CVD method and was characterized both optically and electrically. Al/ZnO/Si
(MIS) device structure was subsequently fabricated and bothI − V andC − V characteristics were studied. The semiconductor-insulator interface charge density (D
it) was calculated by Terman method and was found to be 3·85 × 1011 cm−2eV−1. |
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| Keywords: | Zinc oxide thin film spray-CVD MIS |
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