Switches of High-power Current Pulses with a Submicrosecond Rise Time on the Basis of Series-connected IGBT Transistors |
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Authors: | S. V. Korotkov Yu. V. Aristov A. L. Zhmodikov A. K. Kozlov D. A. Korotkov |
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Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia |
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Abstract: | The results of comparative investigations of assemblies of series-connected IGBT transistors (IRGPS60B120KD) with control circuits that are based on pulse transformers and ADuM21N microcircuits, which have a high insulation strength, are presented. The conditions for efficient switching of high-power current pulses with a submicrosecond rise time are determined. A small switch with an operating voltage of 12 kV that consists of two parallel-connected transistor assemblies is described. It provides switching of microsecond current pulses with an amplitude of 500 A and a rise time of 200 ns at a frequency of 100 Hz under natural cooling. The possibility of scaling the results is shown. |
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