Preparation,microstructural development and dielectric properties of Pb(Mg1/3Nb2/3)O3-Pb(TixZr1−x)O3 multilayer ceramic capacitors |
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Authors: | M. Villegas J. F. Fernández C. Moure P. Durán |
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Affiliation: | (1) Electroceramics Department, Instituto de Cerámica y Vidrio (CSIC), 28500 Arganda del Rey, Madrid, Spain |
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Abstract: | Multilayer ceramic capacitors based on PMN-PZT solid solutions have been prepared using a 70 % Ag-30% Pd alloy as internal electrode. Some interaction of the electrode-dielectric with Ag+ diffusion into the dielectric was observed. The Ag+ diffusion influenced the normal microstructural development present in the PMN-PZT ceramics. In spite of this, the dielectric behaviour of a five active layers capacitor sintered at 1050 °C for 2 h in air showed a capacitance of 120 nF, an effective dielectric constant maximum of ~200 000 and dielectric losses of about 3% near room temperature and 1 kHz. |
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