| MEMS光敏BCB硅—硅键合工艺研究 |
| |
| 引用本文： | 赵璐冰,;徐静,;钟少龙,;李绍良,;吴亚明.MEMS光敏BCB硅—硅键合工艺研究[J].传感器与微系统,2014(8):48-51. |
| |
| 作者姓名： | 赵璐冰 ;徐静 ;钟少龙 ;李绍良 ;吴亚明 |
| |
| 作者单位： | [1]中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室,上海200050; [2]中国科学院大学,北京100049 |
| |
| 基金项目： | 微系统技术国家重点实验室基金资助项目 |
| |
| 摘 要： | 光敏BCB作为粘结介质进行键合工艺实验研究。实验中选用XUS35078负性光敏BCB,提出了优化的光刻工艺参数,得到了所需要的BCB图形层,然后将两硅片在特定的温度与压力条件下完成了BCB键合。测试表明:该光敏BCB具有较小的流动性和较低的塌陷率。键合后的BCB胶厚约为11.6μm,剪切强度为18MPa,He细检漏率小于5.0×10-8atm·cm3/s。此键合工艺可应用于制作需要低温工艺且不能承受高电压的MEMS器件。
|
| 关 键 词： | 光敏BCB 光刻 低温键合 剪切强度 气密性 |
Research on Si-Si bonding technique with photosensitive BCB for MEMS devices |
| |
| Affiliation: | ZHAO Lu-bing, XU Jing, ZHONG Shao-long , LI Shao-liang, WU Ya-ming ( 1. State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2. University of Chinese Academy of Sciences ,Beijing 100049, China) |
| |
| Abstract: | A kind of bonding technique with photosensitive benzo-cyclo-butene （ BCB ） is presented. In our experiments, by employing a kind of negative photosensitive BCB （ XUS35078 ） and optimizing photolithography parameters,well-patterned BCB is obtained, then BCB bonding is carried out under particular temperature and pressure. Test shows that the BCB shows low flow characteristic and collapsing rate. The thickness of BCB photoresist after bonding is 11.6 μm,shear strength of each cell is 18 MPa,and hermeticity is better than 5.0 ×10^-8atm · cm3/s He. This bonding process can be applied for production of MEMS devices which needs low temperature process and cannot bear high voltage . |
| |
| Keywords: | photosensitive BCB photolithography low-temperature bonding shear strength hermeticity |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
