High performance of high-voltage 4H-SiC Schottky barrier diodes

High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes. A typical specific on-resistance (R_on) of these devices was 1.4×10³ Ω cm³ at 24°C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R _on's lower than 6H-SiC based high-power rectifiers with the same breakdown voltage. As for Schottky contact metals, Au, Ni, and Ti were employed in this study. The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights