ZnO growth toward optical devices by MOVPE using N2O |
| |
Authors: | K Ogata K Maejima Sz Fujita Sg Fujita |
| |
Affiliation: | (1) Venture Business Laboratory, Kyoto University, 606-8501 Kyoto, Japan;(2) Department of Electronic Science and Engineering, Kyoto University, 606-8501 Kyoto, Japan |
| |
Abstract: | Wide bandgap semiconductor zinc oxide (ZnO) layers were grown by metalorganic vapor phase epitaxy (MOVPE) using nitrous oxide
(N2O). Strong ultraviolet (UV) photoluminescence emissions with 1000 times less deep ones at room temperature were observed from
ZnO layers grown on sapphire. Alow temperature (500 C)-grown buffer layer of ZnO was effective to enhance the initial nucleation
process and to achieve high quality ZnO layers on it at higher growth temperatures (600–700 C). ZnO layers grown on III–V
semiconductor substrates showed dominant UV luminescence in spite of low temperature growth. These results imply the abilities
of high quality ZnO growth by MOVPE. |
| |
Keywords: | ZnO MOVPE buffer layer photoluminescence |
本文献已被 SpringerLink 等数据库收录! |