Fully-planar AlGaAs/GaAs HBT's achieved by selective CBE regrowth |
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Authors: | Driad R Duchenois AM Zerguine D Alexandre F Legay P Launay P |
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Affiliation: | Lab. de Bagneux, CNET, Bagneux; |
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Abstract: | This paper describes a novel fully planar AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology using selective chemical beam epitaxy (CBE). Planarization is achieved by a selective regrowth of the base and collector contact layers. This process allows the simultaneous metallization of the emitter, base and collector on top of the device. For the devices with an emitter-base junction area of 2×6 μm2 and a base-collector junction area of 14×6 μm2, a current gain cut off frequency of 50 GHz and a maximum oscillation frequency of 30 GHz are achieved. The common emitter current gain hFE is 25 for a collector current density Jc of 2×104 A/cm2 |
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