Effects of electron-beam irradiation,a thin-Ti layer,and a BeO additive on the diffusion of titanium in synthetic sapphire

Titanium was allowed to diffuse into synthetic sapphire (α-Al₂O₃) at 1773–1923 K for 200 h in air. Specimens were prepared by four different methods. Samples were irradiated with a 10 MeV electron beam to fluencies of 2×10¹⁷ cm⁻² for 1 h to induce vacancy formation. A 1-μm layer of titanium was sputtered onto sapphire samples to provide intimate contact with the diffusing elements. Ti diffusion was performed using TiO₂ powder or a mixture of TiO₂ and BeO powders in a ratio of 95:5 to take advantage of the beryllium activity. Ti diffusion was profiled using scanning electron microscope-energy dispersive X-ray spectrometry (SEM–EDX). The diffusion coefficients of Ti were as follows: