Good High-Temperature Stability of TiN/ Al2O3/WN/TiN Capacitors |
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Authors: | Tung-Ming Pan Chun-I Hsieh Tsai-Yu Huang Jian-Ron Yang Pin-Sun Kuo |
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Affiliation: | Chang Gung Univ., Taoyuan; |
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Abstract: | For the first time, good thermal stability up to an annealing temperature of 1000degC has been demonstrated for a new TiN/Al2O3/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of ~ 10, low leakage current of 1.2times10-7 A/cm2 at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al2O3 dielectric suppressing of interfacial-layer formation at Al2 O3/TiN interfaces and resulting in a smoother Al2O3/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm. |
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