Ni层厚度对p-GaN/Ni/Au欧姆接触特性的影响 |
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引用本文: | 周勋,罗木昌,赵文伯,黄烈云. Ni层厚度对p-GaN/Ni/Au欧姆接触特性的影响[J]. 半导体光电, 2014, 35(5): 850-854 |
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作者姓名: | 周勋 罗木昌 赵文伯 黄烈云 |
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作者单位: | 重庆光电技术研究所,重庆400060;重庆光电技术研究所,重庆400060;重庆光电技术研究所,重庆400060;重庆光电技术研究所,重庆400060 |
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摘 要: | 对p-GaN/Ni/Au欧姆接触特性与Ni金属层厚度之间的相关性进行了对比实验研究,利用XRD衍射结果与表面金相显微分析手段对Ni/Au双层金属电极在合金退火过程中的行为特性进行了细致探讨。分析结果表明:在Ni/Au电极结构中,由双层互扩散机制与NiO氧化反应机理决定,Ni层与Au层之间的厚度比率对p型GaN欧姆接触特性的优劣有重要影响,在Ni、Au层厚度相当时可获得最佳的p型欧姆接触。
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关 键 词: | p型GaN 欧姆接触 Ni/Au电极 Ni层厚度 |
收稿时间: | 2013-12-03 |
Effects of Ni-layer Thickness on the Characteristic of p-GaN/Ni/Au Ohmic Contact |
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Abstract: | In this work, the interrelation between the thickness of Ni metal layer and the characteristics of p-GaN/Ni/Au ohmic contact was experimentally studied. The behaviors of Ni/Au double-layer metal electrode in alloyed annealing process were discussed by XRD and metallographic methods. It is revealed that, due to the mechanisms of metal inter-diffuse and Ni-O oxidation, the ratio of Ni/Au layer thickness plays an important role in determining the characteristic of p-GaN/Ni/Au ohmic contact. According to the results, the best p-GaN/Ni/Au ohmic contact can be attained when the thickness of the double metal layers is equal approximately. |
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Keywords: | p-GaN Ohm-contact Ni/Au electrode Ni-layer thickness |
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