| Modeling and Measurement of 3D Solenoid Inductor Based on Through-Silicon Vias |
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| 作者姓名： | YIN Xiangkun WANG Fengjuan ZHU Zhangming Vasilis F.Pavlidis LIU Xiaoxian LU Qijun LIU Yang YANG Yintang |
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| 作者单位： | 1. Shaanxi Key Lab.of Integrated Circuits and Systems, School of Microelectronics, Xidian University;2. School of Automation and Information Engineering, Xi'an University of Technique;3. Department of Computer Science, University of Manchester |
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| 基金项目： | supported in part by the Fok Ying Tung Education Foundation (171112)；;the Fundamental Research Funds for the Central Universities (JB211110, JB191113)；;National Natural Science Foundation of China (62074121)； |
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| 摘 要： | Through-silicon via(TSV) provides vertical interconnectivity among the stacked dies in three-dimensional integrated circuits(3D ICs) and is a promising option to minimize 3D solenoid inductors for on-chip radio-frequency applications. In this paper, a rigorous analytical inductance model of 3D solenoid inductor is proposed based on the concept of loop and partial inductance. And a series of 3D samples are fabricated on 12-in high-resistivity silicon wafer using low-cost standard CMOS-compatible ...
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