| 射频溅射法生长ZnO薄膜的参数研究 |
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| 引用本文： | 耿茜,汪建华,王升高. 射频溅射法生长ZnO薄膜的参数研究[J]. 微纳电子技术, 2007, 44(5): 250-253 |
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| 作者姓名： | 耿茜 汪建华 王升高 |
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| 作者单位： | 武汉工程大学,等离子体化学与新材料重点实验室,武汉,430073 |
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| 摘 要： | 以ZnO陶瓷为溅射靶材,通入纯氩气,使用射频溅射法在玻璃基片上制备ZnO薄膜,研究了气体压强、基片温度、溅射功率等对薄膜性质的影响。通过XRD及原子力显微镜(AFM)等检测得出制备C轴(002)ZAO薄膜的最佳工艺条件为:溅射压强0.4Pa;溅射功率200W;基片温度300℃。
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| 关 键 词： | ZnO陶瓷靶材 薄膜 射频 X射线衍射分析 原子力显微镜 |
| 文章编号： | 1671-4776(2007)05-0250-04 |
| 修稿时间： | 2006-09-19 |
Study on the Parameter of ZnO Thin Films Deposited by RF Magnetron Sputtering |
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| GENG Qian,WANG Jian-hua,WANG Sheng-gao. Study on the Parameter of ZnO Thin Films Deposited by RF Magnetron Sputtering[J]. Micronanoelectronic Technology, 2007, 44(5): 250-253 |
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| Authors: | GENG Qian WANG Jian-hua WANG Sheng-gao |
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| Abstract: | The RF magnetron sputtering technique was employed for ZnO thin films deposition on glass by ZnO target.The reaction atmosphere was Ar.The work pressure,RF power,and the temperature of substrate were studied.The ZnO film was analyzed with XRD and AFM.The best conditions of obtaining ZnO thin film are:the work pressure is 0.4 Pa,the RF power is 200 W and the temperature of substrate is 300 ℃. |
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| Keywords: | ZnO target films RF XRD AFM |
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