Preliminary photovoltaic cells with single crystal CIS substrates

Using the Bridgman method, ingots of CuInSe₂ have been grown, which are microcrackfree, void-free and adhesion-free. From these, p-type substrates have been obtained for the fabrication of preliminary CIS/CdS/ZnO and CIS/CdS/CdO photovoltaic cells, where the window layers were deposited, respectively, by rf sputtering from a ZnO target and by dc reactive sputtering from a Cd target and where the CdS buffer layer was deposited by a chemical bath method. These cells have yielded approximate illuminated jj_sc, V_oc,η and FF values, respectively, up to 28 mA/cm², 0.42 V, 5% and 0.41 for effective areas of 7 to 22 mm².