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一种高电源抑制比曲率补偿带隙基准电压源
引用本文:吴谨,常昌远,石超.一种高电源抑制比曲率补偿带隙基准电压源[J].电子与封装,2008,8(6).
作者姓名:吴谨  常昌远  石超
作者单位:1. 东南大学IC学院,南京,210096
2. 南京申瑞电力股份有限公司,南京,211100
摘    要:在对传统典型CMOS带隙电压基准源电路分析基础上提出了一种高精度、高电源抑制带隙电压基准源。采用二阶曲率补偿技术,电路采用预电压调整电路,为基准电路提供稳定的电源,提高了电源抑制比,在提高精度的同时兼顾了电源抑制比,整个电路采用了CSMC0.5μm标准CMOS工艺实现,采用spectre进行进行仿真,仿真结果显示当温度为-40℃~80℃,输出基准电压变化小于1mV,温度系数为3.29×10-6℃,低频时(1kHz)的电源抑制比达到75dB,基准电路在高于3.3V电源电压下可以稳定工作,具有较好的性能。

关 键 词:带隙电压基准  电压调整电路  曲率补偿

A High PSRR Curvature Compensation Bandgap Reference
WU Jin,CHANG Chang-yuan,SHI Chao.A High PSRR Curvature Compensation Bandgap Reference[J].Electronics & Packaging,2008,8(6).
Authors:WU Jin  CHANG Chang-yuan  SHI Chao
Abstract:In the tradition of the typical CMOS band gap voltage reference circuit analysis based on a high precision and high power supply rejection band gap voltage reference. Second order curvature compensation technology, use of pre-circuit voltage adjustment circuit, as the base circuit to provide a stable power supply, improve the power supply rejection ratio, while enhancing the accuracy of balance of the power supply rejection ratio, the entire circuit using a standard CMOS process to achieve CSMC 0.5μm , A spectre for simulation, the simulation showed that when the temperature of -40℃~ 80℃, the benchmark output voltage is less than 1 mV, temperature coefficient of 3.29 × 10-6℃, when the low-frequency(1 kHz)of the power supply rejection ratio of 75 dB, the benchmark circuit Above the 3.3 V power supply can be stabilized, with good performance
Keywords:bandgap reference  temperature compensation  PSRR
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