| 不同沉积气体对多孤法制备TiC膜的影响 |
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| 引用本文： | 辛煜,程珊华.不同沉积气体对多孤法制备TiC膜的影响[J].功能材料,2000,31(3):331-332. |
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| 作者姓名： | 辛煜 程珊华 |
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| 作者单位： | 苏州大学物理科学与技术学院!江苏苏州215006 |
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| 摘 要： | 采用两种不同的沉积气体CH4 和C2 H2 分别在SUS3 0 4不锈钢基片上用多弧离子法沉积TiC硬质膜。XPS结果表明 ,用C2 H2 作为沉积气体制备TiC膜中的sp2 杂化的碳多于用CH4 作为沉积气体制备的TiC膜。XRD表明 ,用CH4 气体沉积TiC膜的 ( 111)峰为择优取向 ,但用C2 H2 气体沉积的TiC膜却朝着 ( 111)和 ( 2 2 0 )取向竞争生长。TiC薄膜的高硬度某种程度上取决于TiC( 2 2 0 )峰的丰度。
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| 关 键 词： | 磷化钛薄膜 沉积气体 制备 多弧法 |
| 文章编号： | 1001-9731(2000)03-0331-02 |
| 修稿时间： | 1999-03-25 |
The Influence of Different Gases on TiC Films Deposited with Multi-Arc Plating System |
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| XIN Yu ,CHENG Shanhua ,NING
Zhaoyuan ,SHEN Mingrong ,XU Qi''''an.The Influence of Different Gases on TiC Films Deposited with Multi-Arc Plating System[J].Journal of Functional Materials,2000,31(3):331-332. |
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| Authors: | XIN Yu CHENG Shanhua NING
Zhaoyuan SHEN Mingrong XU Qi'an |
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| Affiliation: | XIN Yu ,CHENG Shanhua ,NING
Zhaoyuan ,SHEN Mingrong ,XU Qi'an
(Institute of Physics Science and Technology,Suzhou University,Suzhou,215006,China) |
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| Abstract: | In this paper,we have introduced two different gases (CH 4,C 2H 2) to deposit TiC hard films on the SUS304 stainless steel with multi-arc plating system,respectively.The results of XPS indicate that carbon with sp 2 hybrid form in the TiC film deposited with C 2H 2 gas is more than with CH 4 gas.XRD pattern shows the preferred orientation (111) in the TiC film deposited with CH 4,but TiC films with C 2H 2 grow competively towards (111) and (220) orientations.The hardness of TiC films,to some degree,depends on the amount of the (220) peak. |
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| Keywords: | TiC gas deposition XPS XRD |
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